Seoul-Sana
Samsung Electronics Industries revealed the world's first 512 GB RAM.
The company stated in a statement on its website that these units are assembled using HKMG technology, which is several times faster than DDR memory units and is less energy consuming.
The new memory aims to meet the demands of supercomputing, artificial intelligence, machine learning as well as data analysis applications.
The single memory strip contains eight layers of DRAM chips, each with 16 GB memory, so the manufacturer was able to maximize the configuration of the microcircuit and make the total size of the memory 512 GB, and at the same time this arrangement increased the speed up to 7200 Mbps, which is more It is twice the speed of the supplied DDR in the market.
Engineers have also managed to achieve better energy efficiency as new units use 13 percent less.
